3N156A Datasheet - ETC

3N156A P-channel Transistor

3N 155,A (SILICON) 3N156,A P-channel silicon nitride passivated MOS field-effect enhancement mode transistors designed for chopper and switching application. CASE 20 (T0-72) O2 o STYLE Z PIN 1. SOURCE Z. GATE 1 000 3 3. DRAIN 4. SUBSTRATE AND CASE LEAD MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS 1D .

3N156A Datasheet (279.15 KB)