3N158A Datasheet - ETC

3N158A P-channel Transistor

157,A3N (SILICON) 3N158,A P-channel silicon nitride passivated MOS field-effect enhancement mode transistors designed for chopper and switching application. CASE 20 (T0-72) G2 I0 STYlE 2 PIN 1. SOURCE 2. GATE o0 0 3 3. ORAIN 4. SUBSTRATE AND CASE LEAD MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Dissipation @ TA =25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS ID PD.

3N158A Datasheet (285.17 KB)