4X16E43V 4 MEG x 16 EDO DRAM

Description

4 MEG x 16 EDO DRAM EDO DRAM .
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.

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Datasheet Specifications

Part number: 4X16E43V
Manufacturer: ETC
File Size: 598.34 KB
Datasheet: 4X16E43V_ETC.pdf
Description: 4 MEG x 16 EDO DRAM

Features

* Single +3.3V ±0.3V power supply
* Industry-standard x16 pinout, timing, functions, and package
* 12 row, 10 column addresses (4) 13 row, 9 column addresses (8)
* High-performance CMOS silicon-gate process
* All inputs, outputs and clocks are LVTTL-compatible

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