4X16E43V

4 MEG x 16 EDO DRAM

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	UNKNOWN	MEM4X16E43VTW-5		Bristol Electronics	67	0	$0

4X16E43V Datasheet (598.34 KB)

4X16E43V Datasheet Preview — Preview of 4X16E43V PDF

Datasheet Details

Part number:

4X16E43V

Manufacturer:

ETC

File Size:

598.34 KB

Description:

4 meg x 16 edo dram.

4X16E43V Features

* Single +3.3V ±0.3V power supply

* Industry-standard x16 pinout, timing, functions, and package

* 12 row, 10 column addresses (4) 13 row, 9 column addresses (8)

* High-performance CMOS silicon-gate process

* All inputs, outputs and clocks are LVTTL-compatible

4X16E43V General Description

The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,096 rows by 1,024 co.

📁 Related Datasheet

4X16E83V - 4 MEG x 16 EDO DRAM (ETC)
4 MEG x 16 EDO DRAM EDO DRAM FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x16 pinout, timing, functions, and package • 12 row, 10 c.

4X16E83VTW-6 - 4 MEG x 16 EDO DRAM (ETC)
4 MEG x 16 EDO DRAM EDO DRAM FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x16 pinout, timing, functions, and package • 12 row, 10 c.

TAGS

4X16E43V MEG EDO DRAM ETC

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