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4X16E43V - 4 MEG x 16 EDO DRAM

Datasheet Summary

Description

The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V.

The device is functionally organized as 4,194,304 locations containing 16 bits each.

Features

  • Single +3.3V ±0.3V power supply.
  • Industry-standard x16 pinout, timing, functions, and package.
  • 12 row, 10 column addresses (4) 13 row, 9 column addresses (8).
  • High-performance CMOS silicon-gate process.
  • All inputs, outputs and clocks are LVTTL-compatible.
  • Extended Data-Out (EDO) PAGE MODE access.
  • 4,096-cycle CAS#-BEFORE-RAS# (CBR).

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Datasheet Details

Part number 4X16E43V
Manufacturer ETC
File Size 598.34 KB
Description 4 MEG x 16 EDO DRAM
Datasheet download datasheet 4X16E43V Datasheet
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4 MEG x 16 EDO DRAM EDO DRAM FEATURES • Single +3.3V ±0.
Published: |