4X16E83VTW-6 Description
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. During READ or WRITE cycles, each location is uniquely addressed via.
4X16E83VTW-6 Key Features
- Single +3.3V ±0.3V power supply
- Industry-standard x16 pinout, timing, functions, and package
- High-performance CMOS silicon-gate process
- All inputs, outputs and clocks are LVTTL-patible
- Extended Data-Out (EDO) PAGE MODE access
- 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms
- Self refresh for low-power data retention
- Plastic Package 50-pin TSOP (400 mil)
- Timing 50ns access 60ns access
- Refresh Rates 4K 8K