• Part: 4X16E83V
  • Description: 4 MEG x 16 EDO DRAM
  • Manufacturer: Unknown Manufacturer
  • Size: 598.34 KB
Download 4X16E83V Datasheet PDF
Unknown Manufacturer
4X16E83V
4X16E83V is 4 MEG x 16 EDO DRAM manufactured by Unknown Manufacturer.
FEATURES - Single +3.3V ±0.3V power supply - Industry-standard x16 pinout, timing, functions, and package - 12 row, 10 column addresses (4) 13 row, 9 column addresses (8) - High-performance CMOS silicon-gate process - All inputs, outputs and clocks are LVTTL-patible - Extended Data-Out (EDO) PAGE MODE access - 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms - Self refresh for low-power data retention 4X16E43V PIN ASSIGNMENT (Top View) 50-Pin TSOP VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 NC VCC WE# RAS# NC NC NC NC A0 A1 A2 A3 A4 A5 VCC †A12 OPTIONS - Plastic Package 50-pin TSOP (400 mil) - Timing 50ns access 60ns access - Refresh Rates 4K 8K - Operating Temperature Range mercial (0°C to +70°C) Extended (-40°C to +85°C) MARKING TW -5 -6 4 8 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 VSS DQ15 DQ14 DQ13 DQ12 VSS DQ11 DQ10 DQ9 DQ8 NC VSS CASL# CASH# OE# NC NC NC/A12† A11 A10 A9 A8 A7 A6 VSS for "8K" version, NC for "4K" version. 4X16E43V 4X16E83V None IT Configuration Refresh Row Address Column Addressing 4 Meg x 16 4K 4K (A0-A11) 1K (A0-A9) 4 Meg x 16 8K 8K (A0-A12) 512 (A0-A8) NOTE: 1. The “#” symbol indicates signal is active LOW. 4 MEG x 16 EDO DRAM PART NUMBERS Part Number Example: MEM4X16E43VTW-5 PART NUMBER 4X16E43VTW-x 4X16E83VTW-x t CAC t CAS REFRESH ADDRESSING 4 8 PACKAGE 400-TSOP 400-TSOP KEY TIMING PARAMETERS SPEED -5 -6 t RC 84ns 104ns t RAC 50ns 60ns t PC 20ns 25ns t AA 25ns 30ns 13ns 15ns 8ns 10ns x =...