4X16E83V
ETC
598.34kb
4 meg x 16 edo dram. The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from
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4X16E83VTW-6 - 4 MEG x 16 EDO DRAM
(ETC)
4 MEG x 16 EDO DRAM
EDO DRAM
FEATURES
• Single +3.3V ±0.3V power supply • Industry-standard x16 pinout, timing, functions, and package • 12 row, 10 c.
4X16E43V - 4 MEG x 16 EDO DRAM
(ETC)
4 MEG x 16 EDO DRAM
EDO DRAM
FEATURES
• Single +3.3V ±0.3V power supply • Industry-standard x16 pinout, timing, functions, and package • 12 row, 10 c.