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4X16E83VTW-6 - 4 MEG x 16 EDO DRAM

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Datasheet Details

Part number	4X16E83VTW-6
Manufacturer	ETC
File Size	598.34 KB
Description	4 MEG x 16 EDO DRAM
Datasheet	4X16E83VTW-6_ETC.pdf

4X16E83VTW-6 Product details

Description

The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V.

Features

Single +3.3V ±0.3V power supply.
Industry-standard x16 pinout, timing, functions, and package.
12 row, 10 column addresses (4) 13 row, 9 column addresses (8).
High-performance CMOS silicon-gate process.
All inputs, outputs and clocks are LVTTL-compatible.
Extended Data-Out (EDO) PAGE MODE access.
4,096-cycle CAS#-BEFORE-RAS# (CBR).

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Published: Apr 1, 2005 |