DU28120V - RF MOSFET Power Transistor

Datasheet Details

l l l l l DU2812OV N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices . . Absolute Maximum Ratings at 25°C Electrical Characteristics Parameter Drain-Source Drain-Source Gate-Source Breakdown Voltage at 25°C Symbol BV,,, ’05s ‘GSS V GSfW GM C ISS C oss C Rss GP ‘1D 5 13 60 10 2.0 3.0 Min 65 Max 6.0 6.0 6.0 270 240 48 - Units V mA pA V S pF pF PF dB % % V,,=O. O V, l,s=30.0 mA’.

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Published: Apr 3, 2005 |