FLM7179-18F Datasheet, Fet, ETC

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Part number:

FLM7179-18F

Manufacturer:

ETC

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285.35kb

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📄 Datasheet

Description:

C-band internally matched fet. The FLM7179-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in

TAGS

FLM7179-18F

ETC

📁 Related Datasheet

FLM7179-18F - C-Band Internally Matched FET (SUMITOMO)
FLM7179-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 42.5dBm (Typ.) • High Gain: G1dB = 8.0dB (Typ.) • High PAE: hadd = 30% .

FLM7179-12F - C-Band Internally Matched FET (SUMITOMO)
FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηad.

FLM7179-4F - C-Band Internally Matched FET (SUMITOMO)
FLM7179-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd.

FLM7179-6F - C-Band Internally Matched FET (SUMITOMO)
FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm (Typ.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd.

FLM7179-8F - C-Band Internally Matched FET (SUMITOMO)
FLM7179-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd.

FLM7177-4D - Internally Matched Power GaAs FETs (Fujitsu)
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FLM7185-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm (Typ.) High Gain: G1dB = 8.0dB (Typ.) High PAE: ηad.

FLM7185-6F - C-Band Internally Matched FET (SUMITOMO)
FLM7185-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.0dBm (Typ.) High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd.

FLM7785-12F - C-Band Internally Matched FET (SUMITOMO)
FLM7785-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηad.