FLM7785-18F
ETC
303.11kb
C-band internally matched fet. The FLM7785-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in
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FLM7785-18F - C-Band Internally Matched FET
(SUMITOMO)
FLM7785-18F
C-Band Internally Matched FET FEATURES
• • • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 7.0dB (Typ.) High PAE: ηad.
FLM7785-12F - C-Band Internally Matched FET
(SUMITOMO)
FLM7785-12F
C-Band Internally Matched FET FEATURES
• • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηad.
FLM7785-45F - C-Band Internally Matched FET
(SUMITOMO)
FLM7785-45F
C-Band Internally Matched FET
FEATURES ・High Output Power: P1dB=46.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=32.5%(Typ.) ・Br.
FLM7785-4F - C-Band Internally Matched FET
(SUMITOMO)
FLM7785-4F
C-Band Internally Matched FET FEATURES
• • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd.
FLM7785-6F - C-Band Internally Matched FET
(SUMITOMO)
FLM7785-6F
C-Band Internally Matched FET FEATURES
• • • • • • • High Output Power: P1dB = 38.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd.
FLM7785-8F - C-Band Internally Matched FET
(SUMITOMO)
FLM7785-8F
C-Band Internally Matched FET FEATURES
• • • • • • • High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd.
FLM7177-4D - Internally Matched Power GaAs FETs
(Fujitsu)
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FLM7177-8D - Internally Matched Power GaAs FETs
(Fujitsu)
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FLM7179-12F - C-Band Internally Matched FET
(SUMITOMO)
FLM7179-12F
C-Band Internally Matched FET FEATURES
• • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηad.
FLM7179-18F - C-Band Internally Matched FET
(ETC)
FLM7179-18F
C-Band Internally Matched FET FEATURES
• • • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 8.0dB (Typ.) High PAE: ηad.