FLM7177-8D Datasheet, Fets, Fujitsu

PDF File Details

Part number:

FLM7177-8D

Manufacturer:

Fujitsu

File Size:

214.17kb

Download:

📄 Datasheet

Description:

Internally matched power gaas fets.

Datasheet Preview: FLM7177-8D 📥 Download PDF (214.17kb)
Page 2 of FLM7177-8D Page 3 of FLM7177-8D

TAGS

FLM7177-8D
Internally
Matched
Power
GaAs
FETs
Fujitsu

📁 Related Datasheet

FLM7177-4D - Internally Matched Power GaAs FETs (Fujitsu)
.

FLM7179-12F - C-Band Internally Matched FET (SUMITOMO)
FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηad.

FLM7179-18F - C-Band Internally Matched FET (ETC)
FLM7179-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 8.0dB (Typ.) High PAE: ηad.

FLM7179-18F - C-Band Internally Matched FET (SUMITOMO)
FLM7179-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 42.5dBm (Typ.) • High Gain: G1dB = 8.0dB (Typ.) • High PAE: hadd = 30% .

FLM7179-4F - C-Band Internally Matched FET (SUMITOMO)
FLM7179-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd.

FLM7179-6F - C-Band Internally Matched FET (SUMITOMO)
FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm (Typ.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd.

FLM7179-8F - C-Band Internally Matched FET (SUMITOMO)
FLM7179-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd.

FLM7185-12F - C-Band Internally Matched FET (SUMITOMO)
FLM7185-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm (Typ.) High Gain: G1dB = 8.0dB (Typ.) High PAE: ηad.

FLM7185-6F - C-Band Internally Matched FET (SUMITOMO)
FLM7185-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.0dBm (Typ.) High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd.

FLM7785-12F - C-Band Internally Matched FET (SUMITOMO)
FLM7785-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηad.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts