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FLM7785-6F

C-Band Internally Matched FET

FLM7785-6F Features

* High Output Power: P1dB = 38.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM77

FLM7785-6F General Description

The FLM7785-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature T.

FLM7785-6F Datasheet (230.84 KB)

Preview of FLM7785-6F PDF

Datasheet Details

Part number:

FLM7785-6F

Manufacturer:

SUMITOMO

File Size:

230.84 KB

Description:

C-band internally matched fet.

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TAGS

FLM7785-6F C-Band Internally Matched FET SUMITOMO

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