ME45P04-G Datasheet (ETC) - P-Channel MOSFET

ME45P04-G, P-Channel MOSFET

The ME45P04-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

ME45P04-G Features

* RDS(ON)≦18mΩ@VGS=-10V

* RDS(ON)≦25mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display invert