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ME4542D-G

N- & P-Channel MOSFET

ME4542D-G Features

* RDS(ON) mΩ@VGS=10V (N-Ch) RDS(ON) mΩ@VGS=4.5V (N-Ch) RDS(ON) mΩ@VGS=-10V (P-Ch) RDS(ON) mΩ@VGS=-4.5V (P-Ch) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Power Management DC/DC Converter LCD TV & Monitor Dis

ME4542D-G General Description

The ME4542D is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.

ME4542D-G Datasheet (0.96 MB)

Preview of ME4542D-G PDF

Datasheet Details

Part number:

ME4542D-G

Manufacturer:

Matsuki

File Size:

0.96 MB

Description:

N- & p-channel mosfet.

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TAGS

ME4542D-G P-Channel MOSFET Matsuki

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