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ME4542-G

N- and P-Channel MOSFET

ME4542-G Features

* RDS(ON)≦25mΩ@VGS=10V (N-Ch)

* RDS(ON)≦40mΩ@VGS=4.5V (N-Ch)

* RDS(ON)≦35mΩ@VGS=-10V (P-Ch)

* RDS(ON)≦58mΩ@VGS=-4.5V (P-Ch)

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Manage

ME4542-G General Description

The ME4542 is the N and P Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application s.

ME4542-G Datasheet (1.41 MB)

Preview of ME4542-G PDF

Datasheet Details

Part number:

ME4542-G

Manufacturer:

Matsuki

File Size:

1.41 MB

Description:

N- and p-channel mosfet.

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TAGS

ME4542-G and P-Channel MOSFET Matsuki

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