ME4565

N- and P-Channel 40-VPowerMOSFET

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ME4565 Features

* RDS(ON)≦40mΩ@VGS=10V (N-Ch)

* RDS(ON)≦45mΩ@VGS=4.5V (N-Ch)

* RDS(ON)≦54mΩ@VGS=-10V (P-Ch)

* RDS(ON)≦60mΩ@VGS=-4.5V(P-Ch)

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Managem

ME4565 General Description

The LT4565 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application .

ME4565 Datasheet (1.83 MB)

ME4565 Datasheet Preview — Preview of ME4565 PDF

Datasheet Details

Part number:

ME4565

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File Size:

1.83 MB

Description:

N- and p-channel 40-vpowermosfet.

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ME4565 and P-Channel 40-VPowerMOSFET LITE-ON

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ME4565 Features

ME4565 General Description

Datasheet Details

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