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ME4542-G - N- and P-Channel MOSFET

This page provides the datasheet information for the ME4542-G, a member of the ME4542 N- and P-Channel MOSFET family.

Datasheet Summary

Description

The ME4542 is the N and P Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦25mΩ@VGS=10V (N-Ch).
  • RDS(ON)≦40mΩ@VGS=4.5V (N-Ch).
  • RDS(ON)≦35mΩ@VGS=-10V (P-Ch).
  • RDS(ON)≦58mΩ@VGS=-4.5V (P-Ch).
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME4542-G

Datasheet Details

Part number ME4542-G
Manufacturer Matsuki
File Size 1.41 MB
Description N- and P-Channel MOSFET
Datasheet download datasheet ME4542-G Datasheet
Additional preview pages of the ME4542-G datasheet.

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Full PDF Text Transcription

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N and P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4542 is the N and P Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4542/ME4542-G FEATURES ● RDS(ON)≦25mΩ@VGS=10V (N-Ch) ● RDS(ON)≦40mΩ@VGS=4.5V (N-Ch) ● RDS(ON)≦35mΩ@VGS=-10V (P-Ch) ● RDS(ON)≦58mΩ@VGS=-4.
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