Datasheet4U Logo Datasheet4U.com

ME4544 - N- & P-Channel MOSFET

Datasheet Summary

Description

The ME4544 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) 28mΩ@VGS=10V (N-Ch) RDS(ON) 42mΩ@VGS=4.5V (N-Ch) RDS(ON) 60mΩ@VGS=-10V (P-Ch) RDS(ON) 90mΩ@VGS=-4.5V (P-Ch) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Datasheet preview – ME4544

Datasheet Details

Part number ME4544
Manufacturer Matsuki
File Size 1.22 MB
Description N- & P-Channel MOSFET
Datasheet download datasheet ME4544 Datasheet
Additional preview pages of the ME4544 datasheet.
Other Datasheets by Matsuki

Full PDF Text Transcription

Click to expand full text
N- and P-Channel 30-V (D-S) MOSFET ME4544/ ME4544-G GENERAL DESCRIPTION The ME4544 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View FEATURES RDS(ON) 28mΩ@VGS=10V (N-Ch) RDS(ON) 42mΩ@VGS=4.5V (N-Ch) RDS(ON) 60mΩ@VGS=-10V (P-Ch) RDS(ON) 90mΩ@VGS=-4.
Published: |