ME4542D-G Datasheet | Matsuki

N- and P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4542D is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4542D/ME4542D-G Features RDS(ON) mΩ@VGS=10V (N-Ch) RDS(ON) mΩ@VGS=4.5V (N-Ch) RDS(ON)...