MID100-12A3 Datasheet - ETC

MID100-12A3 IGBT Modules

MII 100-12 A3 MID 100-12 A3 MDI 100-12 A3 IGBT Modules Short Circuit SOA Capability Square RBSOA IC25 = 135 A VCES = 1200 V VCE(sat) typ. = 2.2 V MII 1 MID 1 MDI 1 3 2 1 4 5 6 7 7 6 3 3 7 6 3 4 5 2 4 5 2 2 E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 15 W, non repetitive.

MID100-12A3 Features

* NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base

MID100-12A3-ETC.pdf