P12N60
ETC
67.03kb
Hgtp12n60. The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has
📁 Related Datasheet
P12N50 - FDP12N50
(Fairchild Semiconductor)
FDP12N50 / FDPF12N50T N-Channel MOSFET
May 2012
FDP12N50 / FDPF12N50T
N-Channel MOSFET
500V, 11.5A, 0.65Ω Features
• RDS(on) = 0.55Ω (Typ.)@ VGS = 1.
P12NB30 - STP12NB30
(ST Microelectronics)
.DataSheet.co.kr
STP12NB30 STP12NB30FP
N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET
PRELIMINARY DATA TYPE STP3NB60 STP12NB30F P
s s s s s
V DSS.
P12NB30FP - STP12NB30
(ST Microelectronics)
.DataSheet.co.kr
STP12NB30 STP12NB30FP
N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET
PRELIMINARY DATA TYPE STP3NB60 STP12NB30F P
s s s s s
V DSS.
P12NK60Z - N-CHANNEL MOSFET
(STMicroelectronics)
STP12NK60Z STF12NK60Z, STW12NK60Z
N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH™ Power MOSFET
Features
Typ.
P12NM50 - STP12NM50
(STMicroelectronics)
..net
STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1
N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET
Gene.
P120 - Rotary Potentiometer
(TT)
Rotary Potentiometer P120 Series
Features:
• 12 mm • Conductive plastic element • Single/dual unit • 100,000 cycle life • Insulated shaft • RoHS pl.
P1200A - Silicon Rectifier Diodes
(Diotec)
62.5 ±0.5 7,5 ±0.1
P1200A P1200G
Version 2012-10-01
Ø 8 ±0.1 Type
Ø 1.2 ±0.05 Dimensions - Maße [mm]
P1200A P1200G
Silicon Rectifier Diodes .
P1200A - Standard silicon rectifier diodes
(Semikron)
P 1200 A P 1200 S
Axial lead diode
Standard silicon rectifier diodes
.3
- 7 - A - 2 - B - 8 - C - - .
P1200B - Silicon Rectifier Diodes
(Diotec)
62.5 ±0.5 7,5 ±0.1
P1200A P1200G
Version 2012-10-01
Ø 8 ±0.1 Type
Ø 1.2 ±0.05 Dimensions - Maße [mm]
P1200A P1200G
Silicon Rectifier Diodes .
P1200B - Standard silicon rectifier diodes
(Semikron)
P 1200 A P 1200 S
Axial lead diode
Standard silicon rectifier diodes
.3
- 7 - A - 2 - B - 8 - C - - .
