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P12N50 FDP12N50

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Description

FDP12N50 / FDPF12N50T N-Channel MOSFET May 2012 FDP12N50 / FDPF12N50T N-Channel MOSFET 500V, 11.5A, 0.65Ω .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Features

* RDS(on) = 0.55Ω (Typ. )@ VGS = 10V, ID = 6A
* Low gate charge ( Typ. 22nC)
* Low Crss ( Typ. 11pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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FDP12N50 Fairchild Semiconductor
Fairchild Semiconductor P12N50-like datasheet