P12N50

FDP12N50

Fairchild Semiconductor

P12N50 Features

* RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A

* Low gate charge ( Typ. 22nC)

* Low Crss ( Typ. 11pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* RoHS compliant UniFETTM tm Description These N-Channel enhancement mode

P12N50 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

P12N50 Datasheet (509.73 KB)

P12N50 Datasheet Preview — Preview of P12N50 PDF

Datasheet Details

Part number:

P12N50

Manufacturer:

Fairchild Semiconductor

File Size:

509.73 KB

Description:

Fdp12n50.

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P12N50 FDP12N50 Fairchild Semiconductor

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P12N50 Features

P12N50 General Description

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