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P12NB30FP Datasheet - ST Microelectronics

P12NB30FP STP12NB30

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

P12NB30FP_STMicroelectronics.pdf

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