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SKM200GB124 IGBT

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Description

Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = *IC IFM = *ICM IFSM I .

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Datasheet Specifications

Part number
SKM200GB124
Manufacturer
ETC
File Size
131.47 KB
Datasheet
SKM200GB124_ETC.pdf
Description
IGBT

Features

* MOS input (voltage controlled)
* N channel, homogeneous Silicon structure NPT-IGBT (Non punch through)
* Low saturation voltage
* Low inductance case
* Low tail current with low temperature dependence
* High short circuit capability, self limiting to

Applications

* → B 6
* 161
* Switching (not for linear use)
* Inverter drives
* UPS 1) 2) 3) 8) Inverse Diode 8) IF = 150 A VGE = 0 V; IF = 200 A Tj = 25 (125) °C Tj = 125 °C 2) Tj = 125 °C 2) IF = 150 A; Tj = 125 °C2) IF = 150 A; Tj = 125 °C2) per IGBT per diode per module Therma

SKM200GB124 Distributors

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