SKM200GB124 - IGBT

Datasheet Details

MOS input (voltage controlled).
N channel, homogeneous Silicon structure NPT-IGBT (Non punch through).
Low saturation voltage.
Low inductance case.
Low tail current with low temperature dependence.
High short circuit capability, self limiting to 6.
Icnom.
Latch-up free.
Fast & soft inverse CAL diodes 8).
Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould.
Large cle.

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Published: Apr 8, 2005 |