* MOS input (voltage controlled)
* N channel, homogeneous Silicon structure NPT-IGBT (Non punch through)
* Low saturation voltage
* Low inductance case
* Low tail current with low temperature dependence
* High short circuit capability, self limiting to
SKM200GB124D Datasheet (131.47 KB)
SKM200GB124D
ETC
131.47 KB
Igbt.
Absolute Maximum Ratings
Symbol Conditions 1)
VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF =
*IC IFM =
*ICM IFSM I .
📁 Related Datasheet
SKM200GB124 IGBT (ETC)
SKM200GB123D IGBT (Semikron)
SKM200GB123D1 IGBT (Semikron)
SKM200GB125D IGBT (Semikron International)
SKM200GB126D IGBT (Semikron International)
SKM200GB128D SPT IGBT (Semikron)
SKM200GB12E4 IGBT (Semikron International)
SKM200GB12F4 IGBT (Semikron)
SKM200GB12T4 IGBT (Semikron)
SKM200GB12V IGBT (Semikron International)
