SKM200GB124D Datasheet (ETC)

SKM200GB124D, IGBT

Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = IC IFM = ICM IFSM I 2t RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min.

DIN 40040 DIN IEC 68 T.1 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C tp = 10 ms; Tj = 150 °C Values Units 1200 1200 290 / 200 580 / 400 ± 20 1350 40 +150 (125) 2500 Class F 40/125/56 195 / 130 580 / 400 1450 10 50

SKM200GB124D Features

* MOS input (voltage controlled)

* N channel, homogeneous Silicon structure NPT-IGBT (Non punch through)

* Low saturation voltage

* Low inductance case

* Low tail current with low temperature dependence

* High short circuit capability, self limiting to