SKM200GB123D - IGBT
Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions 1) Values 123 D 123 D1 Units V V A A V W °C V 1200 1200 200 / 180 400 / 360 ± 20 1380 40 .
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.+150 (125) 2 500 7) Class F 40/125/56 200 / 130 400 / 360 1450 10 500 FWD 6) 260 / 180 400 / 360 1800 24 200 SEMITRANS® M IGBT Modules SKM 200 GA 123 D ) SKM 200 GB 123 D SKM 200 GB 123 D1 6) SKM 200 GAL 123 D 6) SKM 200 GAR 123 D 6) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp
SKM200GB123D Features
* MOS input (voltage controlled)
* N channel, Homogeneous Si
* Low inductance case
* Very low tail current with low temperature dependence
* High short circuit capability, self limiting to 6
* Icnom
* Latch-up free
* Fast & soft inverse CAL
