SKM200GB12V Datasheet - Semikron International

SKM200GB12V IGBT

SKM200GB12V Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 311 237 200 600 -20 20 Tj = 125 °C 10 -40 175 Tc = 25 °C Tc = 80 °C 229 172 200 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 990 -40 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 500 -40 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 3 VGES tpsc Tj IF IFnom Inverse diode SKM20.

SKM200GB12V Features

* V-IGBT = 6. Generation Trench V-IGBT (Fuji)

* CAL4 = Soft switching 4. Generation CAL-diode

* Isolated copper baseplate using DBC technology (Direct Copper Bonding)

* UL recognized, file no. E63532

* Increased power cycling capability

* With integrat

SKM200GB12V Datasheet (217.26 KB)