SKM200GB12V - IGBT

Features

V-IGBT = 6. Generation Trench V-IGBT (Fuji).
CAL4 = Soft switching 4. Generation CAL-diode.
Isolated copper baseplate using DBC technology (Direct Copper Bonding).
UL recognized, file no. E63532.
Increased power cycling capability.
With integrated gate resistor.
Low switching losses at high di/dt Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint t.

Semikron International

Datasheet Details

Part number	SKM200GB12V
Manufacturer	Semikron International
File Size	217.26 KB
Description	IGBT
Datasheet	SKM200GB12V Datasheet
Additional preview pages of the SKM200GB12V datasheet.

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Full PDF Text Transcription

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SKM200GB12V Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 311 237 200 600 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 229 172 200 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 990 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 500 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 3 VGES tpsc Tj IF IFnom Inverse diode SKM200GB12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no.

Published: Aug 11, 2014 |