SKM200GB124D Description
Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = IC IFM = ICM IFSM I 2t RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 Tcase = 25/80 °C Tcase = 25/80 °C;.
SKM200GB124D Key Features
- MOS input (voltage controlled)
- N channel, homogeneous Silicon structure NPT-IGBT (Non punch through)
- Low saturation voltage
- Low inductance case
- Low tail current with low temperature dependence
- High short circuit capability, self limiting to 6
- Latch-up free
- Fast & soft inverse CAL diodes 8)
- Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould
- Large clearance (12 mm) and creepage distances (20 mm)