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SKM200GB124 - IGBT

Features

  • MOS input (voltage controlled).
  • N channel, homogeneous Silicon structure NPT-IGBT (Non punch through).
  • Low saturation voltage.
  • Low inductance case.
  • Low tail current with low temperature dependence.
  • High short circuit capability, self limiting to 6.
  • Icnom.
  • Latch-up free.
  • Fast & soft inverse CAL diodes 8).
  • Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould.
  • Large cle.

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Datasheet Details

Part number SKM200GB124
Manufacturer ETC
File Size 131.47 KB
Description IGBT
Datasheet download datasheet SKM200GB124 Datasheet
Additional preview pages of the SKM200GB124 datasheet.

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Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = –IC IFM = –ICM IFSM I 2t RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C tp = 10 ms; Tj = 150 °C Values Units 1200 1200 290 / 200 580 / 400 ± 20 1350 –40 ...
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