SKM200GB12V Description
20 Tj = 125 °C 10 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 500 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 3 VGES tpsc Tj IF IFnom Inverse diode SKM200GB12V.
SKM200GB12V Key Features
- V-IGBT = 6. Generation Trench V-IGBT (Fuji)
- CAL4 = Soft switching 4. Generation CAL-diode
- Isolated copper baseplate using DBC technology (Direct Copper Bonding)
- UL recognized, file no. E63532
- Increased power cycling capability
- With integrated gate resistor
- Low switching losses at high di/dt