SSM4435 Datasheet - ETC

SSM4435 P-Channel E nhancement Mode MOS FET

www.DataSheet4U.com S outh S ea S emiconductor SSS ID -8A S S M4435 J ULY ,2004 V er1.1 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) Max 5 R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = -10V 35 @ V G S = -4.5V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Vo.

SSM4435_ETC.pdf