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10N65F Datasheet - EVVO

650V N-Channel Enhancement Mode MOSFET

10N65F Features

* VDS = 650V ID =10A RDS(ON) < 0.9Ω @ VGS=10V （Type：0.75Ω） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value TO-220F TO-220 VDSS Drain-Source Voltage (VGS = 0V) 650 ID Continuous Drain Cur

10N65F General Description

The 10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and highe.

10N65F Datasheet (2.48 MB)

Preview of 10N65F PDF

Datasheet Details

Part number:

10N65F

Manufacturer:

EVVO

File Size:

2.48 MB

Description:

650v n-channel enhancement mode mosfet.

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10N65F 650V N-Channel Enhancement Mode MOSFET EVVO

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