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M24L16161DA Datasheet - Elite Semiconductor Memory Technology

M24L16161DA, 16-Mbit (1M x 16) Pseudo Static RAM

ESMT Revision History : Revision 1.0 (Jul.4, 2007) - Original www.DataSheet4U.com M24L16161DA Elite Semiconductor Memory Technology Inc.Publicat.
of read and write modes.
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M24L16161DA_EliteSemiconductorMemoryTechnology.pdf

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Datasheet Details

Part number:

M24L16161DA

Manufacturer:

Elite Semiconductor Memory Technology

File Size:

380.10 KB

Description:

16-Mbit (1M x 16) Pseudo Static RAM

Features

* Wide voltage range: 2.2V
* 3.6V
* Access Time: 70 ns
* Ultra-low active power
* Typical active current: 3 mA @ f = 1 MHz
* Typical active current: 18 mA @ f = fmax
* Ultra low standby power
* Automatic power-down when deselected

Applications

* such as cellular telephones. The device can be put into standby mode when deselected ( CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected ( CE1 Logic Block Diagram Elite Semiconductor Memory Technolog

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