M24L416256DA Datasheet, Ram, Elite Semiconductor Memory Technology

M24L416256DA Features

• Ram
• Advanced low-power architecture
• High speed: 55 ns, 60 ns and 70 ns
• Wide voltage range: 2.7V to 3.6V
• Typical active current: 1 mA @ f = 1 MHz

PDF File Details

Part number:

M24L416256DA

Manufacturer:

Elite Semiconductor Memory Technology

File Size:

346.71kb

Download:

📄 Datasheet

Description:

4-mbit (256k x 16) pseudo static ram. of read and write modes. Functional Description The M24L416256DA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 2

M24L416256DA Application

• Applications such as cellular telephones. The device can be put into standby mode Elite Semiconductor Memory Technology Inc. Publication Date: Jul

TAGS

M24L416256DA

Elite Semiconductor Memory Technology

📁 Related Datasheet

M24L416256SA - 4-Mbit (256K x 16) Pseudo Static RAM (Elite Semiconductor Memory Technology)
ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access time: 55 ns, 60 ns and 70 ns • Ultra-low active power — Typical active current: 1 mA @ f .

M24L48512DA - 4-Mbit (512K x 8) Pseudo Static RAM (Elite Semiconductor Memory Technology)
ESMT PSRAM .. M24L48512DA 4-Mbit (512K x 8) Pseudo Static RAM Features • • • • • • Advanced low power architecture High speed: 55 .

M24L48512SA - 4-Mbit (512K x 8) Pseudo Static RAM (Elite Semiconductor Memory Technology)
ESMT PSRAM .. M24L48512SA 4-Mbit (512K x 8) Pseudo Static RAM Features • • • • • • Advanced low power architecture High speed: 55 .

M24L16161DA - 16-Mbit (1M x 16) Pseudo Static RAM (Elite Semiconductor Memory Technology)
ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original .. M24L16161DA Elite Semiconductor Memory Technology Inc. Publicat.

M24L16161ZA - 16-Mbit (1M x 16) Pseudo Static RAM (Elite Semiconductor Memory Technology)
ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original .. M24L16161ZA Elite Semiconductor Memory Technology Inc. Publicat.

M24L216128DA - 2-Mbit (128K x 16) Pseudo Static RAM (Elite Semiconductor Memory Technology)
ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typical active current: 1 mA @ f .

M24L216128SA - 2-Mbit (128K x 16) Pseudo Static RAM (Elite Semiconductor Memory Technology)
ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — T.

M24L28256DA - 2-Mbit (256K x 8) Pseudo Static RAM (Elite Semiconductor Memory Technology)
ESMT PSRAM Features •Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.3V •Typical active current: 1 mA @ f = 1.

M24L28256SA - 2-Mbit (256K x 8) Pseudo Static RAM (Elite Semiconductor Memory Technology)
ESMT PSRAM Features •Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1 mA @ f = 1.

M24L816512DA - 8-Mbit (512K x 16) Pseudo Static RAM (Elite Semiconductor Memory Technology)
ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6 V • Typical active current: 2 mA @ f.