M24L48512DA
Elite Semiconductor Memory Technology
309.44kb
4-mbit (512k x 8) pseudo static ram. of read and write modes. Functional Description The M24L48512DA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 51
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M24L48512SA - 4-Mbit (512K x 8) Pseudo Static RAM
(Elite Semiconductor Memory Technology)
ESMT
PSRAM
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M24L48512SA 4-Mbit (512K x 8) Pseudo Static RAM
Features
• • • • • • Advanced low power architecture High speed: 55 .
M24L416256DA - 4-Mbit (256K x 16) Pseudo Static RAM
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ESMT
PSRAM
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• Advanced low-power architecture •High speed: 55 ns, 60 ns and 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1.
M24L416256SA - 4-Mbit (256K x 16) Pseudo Static RAM
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ESMT
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• Wide voltage range: 2.7V–3.6V • Access time: 55 ns, 60 ns and 70 ns • Ultra-low active power — Typical active current: 1 mA @ f .
M24L16161DA - 16-Mbit (1M x 16) Pseudo Static RAM
(Elite Semiconductor Memory Technology)
ESMT
Revision History :
Revision 1.0 (Jul. 4, 2007) - Original
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Elite Semiconductor Memory Technology Inc.
Publicat.
M24L16161ZA - 16-Mbit (1M x 16) Pseudo Static RAM
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Revision 1.0 (Jul. 4, 2007) - Original
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M24L216128DA - 2-Mbit (128K x 16) Pseudo Static RAM
(Elite Semiconductor Memory Technology)
ESMT
PSRAM
Features
‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typical active current: 1 mA @ f .
M24L216128SA - 2-Mbit (128K x 16) Pseudo Static RAM
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ESMT
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• Wide voltage range: 2.7V–3.6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — T.
M24L28256DA - 2-Mbit (256K x 8) Pseudo Static RAM
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ESMT
PSRAM
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•Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.3V •Typical active current: 1 mA @ f = 1.
M24L28256SA - 2-Mbit (256K x 8) Pseudo Static RAM
(Elite Semiconductor Memory Technology)
ESMT
PSRAM
Features
•Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1 mA @ f = 1.
M24L816512DA - 8-Mbit (512K x 16) Pseudo Static RAM
(Elite Semiconductor Memory Technology)
ESMT
PSRAM
Features
‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6 V • Typical active current: 2 mA @ f.