Part number:
M24L816512SA
Manufacturer:
Elite Semiconductor Memory Technology
File Size:
360.74 KB
Description:
8-mbit (512k x 16) pseudo static ram
M24L816512SA Datasheet (360.74 KB)
M24L816512SA
Elite Semiconductor Memory Technology
360.74 KB
8-mbit (512k x 16) pseudo static ram
* ‧Advanced low-power architecture
* High speed: 55 ns, 70 ns
* Wide voltage range: 2.7V to 3.6V
* Typical active current: 2 mA @ f = 1 MHz
* Typical active current: 11 mA @ f = fMAX
* Low standby power
* Automatic power-down when deselected www.DataShe
📁 Related Datasheet
M24L816512DA - 8-Mbit (512K x 16) Pseudo Static RAM
(Elite Semiconductor Memory Technology)
ESMT
PSRAM
Features
‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6 V • Typical active current: 2 mA @ f.
M24L16161DA - 16-Mbit (1M x 16) Pseudo Static RAM
(Elite Semiconductor Memory Technology)
ESMT
Revision History :
Revision 1.0 (Jul. 4, 2007) - Original
..
M24L16161DA
Elite Semiconductor Memory Technology Inc.
Publicat.
M24L16161ZA - 16-Mbit (1M x 16) Pseudo Static RAM
(Elite Semiconductor Memory Technology)
ESMT
Revision History :
Revision 1.0 (Jul. 4, 2007) - Original
..
M24L16161ZA
Elite Semiconductor Memory Technology Inc.
Publicat.
M24L216128DA - 2-Mbit (128K x 16) Pseudo Static RAM
(Elite Semiconductor Memory Technology)
ESMT
PSRAM
Features
‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typical active current: 1 mA @ f .
M24L216128SA - 2-Mbit (128K x 16) Pseudo Static RAM
(Elite Semiconductor Memory Technology)
ESMT
PSRAM
Features
• Wide voltage range: 2.7V–3.6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — T.
M24L28256DA - 2-Mbit (256K x 8) Pseudo Static RAM
(Elite Semiconductor Memory Technology)
ESMT
PSRAM
Features
•Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.3V •Typical active current: 1 mA @ f = 1.