M24L816512SA 8-Mbit (512K x 16) Pseudo Static RAM

Elite Semiconductor Memory Technology

M24L816512SA Description

ESMT PSRAM .
of read and write modes.

M24L816512SA Features

* ‧Advanced low-power architecture
* High speed: 55 ns, 70 ns
* Wide voltage range: 2.7V to 3.6V
* Typical active current: 2 mA @ f = 1 MHz
* Typical active current: 11 mA @ f = fMAX
* Low standby power
* Automatic power-down when deselected www. DataShe

M24L816512SA Applications

* such as cellular telephones. The device can be put into standby mode when deselected ( CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0through I/O15) are placed in a high-impedance state when : deselected ( CE HIGH), outputs are disabled ( OE HIGH), both Byte High Enable and Logic

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Datasheet Details

Part number: M24L816512SA
Manufacturer: Elite Semiconductor Memory Technology
File Size: 360.74 KB
Datasheet: M24L816512SA_EliteSemiconductorMemoryTechnology.pdf
Description: 8-Mbit (512K x 16) Pseudo Static RAM

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8-Mbit 512K Pseudo Static RAM Elite Semiconductor Memory Technology

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