A1015 PNP Epitaxial Silicon Transistor LOW FREQUENCY AMPLIFIER Collection Dissipation : PC(max) = 400mW Collector-Emitter Voltage : VCEO = -50V Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Collector Current IC -150 mA Collector Dissipation Junction Temperature Storage Temperature PC TJ TSTG 400 mW 150 oC -55~+150 oC Electrical Characteristics (TA=25oC) Characteristic Symbol
Datasheet Details
Part number:
A1015
Manufacturer:
Elite
File Size:
88.64 KB
Description:
Pnp epitaxial silicon transistor.