A1015 Datasheet - Elite

A1015 PNP Epitaxial Silicon Transistor

A1015 PNP Epitaxial Silicon Transistor LOW FREQUENCY AMPLIFIER Collection Dissipation : PC(max) = 400mW Collector-Emitter Voltage : VCEO = -50V Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Collector Current IC -150 mA Collector Dissipation Junction Temperature Storage Temperature PC TJ TSTG 400 mW 150 oC -55~+150 oC Electrical Characteristics (TA=25oC) Characteristic Symbol .

A1015-Elite.pdf

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Datasheet Details

Part number:

A1015

Manufacturer:

Elite

File Size:

88.64 KB

Description:

Pnp epitaxial silicon transistor.

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A1015 A1015 PNP Epitaxial Silicon Transistor Elite

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