C3198
C3198 is NPN Epitaxial Silicon Transistor manufactured by Elite.
Features
Collector-Emitter Voltage: VCEO=50V Collector Dissipation: PC(max)=625m W
TO-92
Absolute Maximum Ratings (TA=25o C)
Characteristic
Symbol Rating Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC PC TJ TSTG
60 50 5 150 625 150 -55~+150
V V V m A m W o C o C
1. Emitter 2. Collector 3. Base
Electrical Characteristics (TA=25o C)
Characteristic
Symbol
Test Conditions
Collector-Base Breakdown Voltage
BVCBO IC= 100µA, IE=0
Collector-Emitter Breakdown Voltage
BVCEO IC= 1m A, IB=0
Emitter-Base Breakdown Voltage
BVEBO IE= 100µA, IC=0
Collector Cut-off Current
ICBO VCB= 60V, IE=0
Emitter Cut-off Current
IEBO VEB= 5V, IC=0
DC Current Gain h FE(1) VCE= 6V, IC= 2m A h FE(2) VCE= 6V, IC= 150m A
Collector-Emitter Saturation Voltage
VCE(sat) IC= 100m A, IB= 10m A
Base-Emitter Saturation Voltage
VBE(sat) IC= 100m A, IB= 10m A
Transition Frequency f T VCE= 10V, IC= 1m A
F=30MHz
Min Typ Max Unit
60 V
50 V
5V
.01 µA
0.1 µA
70...
