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HM5425801B - 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank

Datasheet Summary

Description

The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices.

Read and write operations are performed at the cross points of the CLK and the CLK.

This high speed data transfer is realized by the 2-bit prefetch piplined architecture.

Features

  • 2.5 V power supply SSTL-2 interface for all inputs and outputs Clock frequency: 143 MHz/133 MHz/125 MHz/100 MHz (max) Data inputs, outputs, and DM are synchronized with DQS 4 banks can operate simultaneously and independently Burst read/write operation Programmable burst length: 2/4/8  Burst read stop capability Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. HM5425161B, HM5425801B,.

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Datasheet Details

Part number HM5425801B
Manufacturer Elpida Memory
File Size 489.71 KB
Description 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank
Datasheet download datasheet HM5425801B Datasheet
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Other Datasheets by Elpida Memory
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Full PDF Text Transcription

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HM5425161B Series HM5425801B Series HM5425401B Series 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank/ 16-Mword × 4-bit × 4-bank E0086H20 (Ver. 2.0) Jan. 23, 2002 Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode resistor, the on-chip Delay Locked Loop (DLL) can be set enable or disable. Features • • • • • • • 2.
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