* q q q q q Super-high density (adopting 0.45µm silicon gate CMOS with 2- and 3-metal layers) High-speed operation (operation delay of internal gate = 0.160ns at 3.3V, 2-input power NAND standard) Internal gate = 3.3 and 3.0V (2.0V single), I/O buffer = 5.0, 3.3 and 3.0V (2.0V single) (built-in level
SLA402T
Epson
58.68 KB
(sla40000 series) high density gate array.
PF842-02
SLA40000 Series
High Density Gate Array
q Super-high-density/speed gate array q Operates on 3.3 and 3.0V power source (level shifter is pre-.
📁 Related Datasheet
SLA4028 High Density Gate Array (Seiko Epson Corp)
SLA4028 (SLA40000 Series) High Density Gate Array (Epson)
SLA40000 (SLA40000 Series) High Density Gate Array (Epson)
SLA4010 NPN Darlington With built-in avalanche diode (Sanken electric)
SLA4030 NPN Darlington (Sanken electric)
SLA4031 NPN Darlington (Sanken electric)
SLA4036 NPN Darlington (Sanken)
SLA4041 NPN Darlington (Sanken electric)
SLA4046 (SLA40000 Series) High Density Gate Array (Epson)
SLA404T (SLA40000 Series) High Density Gate Array (Epson)
