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EM566168 1M x 16 Pseudo SRAM

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Description

EtronTech .
Symbol A0. A19 DQ0. DQ15 CE1# CE2 OE# WE# LB# UB# VCC VSS Function Address Inputs Data Inputs/Outputs Chip Enable Deep Power Down Ou.

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Datasheet Specifications

Part number
EM566168
Manufacturer
Etron Technology Inc.
File Size
146.70 KB
Datasheet
EM566168_EtronTechnologyInc..pdf
Description
1M x 16 Pseudo SRAM

Features

* Organized as 1M words by 16 bits
* Fast Cycle Time : 70ns
* Standby Current : 100uA
* Deep power-down Current : 10uA (Memory cell data invalid)
* Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15)
* Compatible with low power SRAM
* Single Power

Applications

* where high speed, low power and battery backup are required. And, with a guaranteed wide operating range, the EM566168 can be used in environments exhibiting extreme temperature conditions. Pin Location Symbol A0 A1 A2 A3 A4 A5 A6 A7 Location A3 A4 A5 B3 B4 C3 C4 D4 Symbol A8 A9 A10 A11 A12 A13 A14

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