FLK027XP

GaAs FET & HEMT Chips

Eudyna Devices

FLK027XP Features

* High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Source Gate Drain DESCRIPTION The FLK027XP, and FLK027XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-

FLK027XP General Description

The FLK027XP, and FLK027XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE.

FLK027XP Datasheet (129.11 KB)

FLK027XP Datasheet Preview — Preview of FLK027XP PDF

Datasheet Details

Part number:

FLK027XP

Manufacturer:

Eudyna Devices

File Size:

129.11 KB

Description:

Gaas fet & hemt chips.

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FLK027XP GaAs FET HEMT Chips Eudyna Devices

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FLK027XP Features

FLK027XP General Description

Datasheet Details

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Description:

FLK027XP Distributor