FLK057WG
Eudyna Devices
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Ku band power gaas fet. The FLK057WG is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides supe
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FLK057XV - GaAs FET & HEMT Chips
(Eudyna Devices)
FLK057XV
GaAs FET & HEMT Chips FEATURES
• • • • High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Prove.
FLK017WF - Ku Band Power GaAs FET
(Eudyna Devices)
FLK017WF
X, Ku Band Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.).
FLK017XP - GaAs FET & HEMT Chips
(Eudyna Devices)
FLK017XP
GaAs FET & HEMT Chips FEATURES
• • • • High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Prove.
FLK027WG - Ku Band Power GaAs FET
(Eudyna Devices)
FLK027WG
X, Ku Band Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.).
FLK027XP - GaAs FET & HEMT Chips
(Eudyna Devices)
FLK027XP, FLK027XV
GaAs FET & HEMT Chips FEATURES
• • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(T.
FLK027XV - GaAs FET & HEMT Chips
(Eudyna Devices)
FLK027XP, FLK027XV
GaAs FET & HEMT Chips FEATURES
• • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(T.
FLK107MH-14 - X / Ku Band Power GaAs FET
(Eudyna Devices)
FEATURES
• High Output Power: P1dB = 30.0dBm(Typ.) • High Gain: G1dB = 6.5dB(Typ.) • High PAE: ηadd = 31%(Typ.) • Proven Reliability • Hermetic Metal/.
FLK207MH-14 - Ku Band Power GaAs FET
(Eudyna Devices)
FLK207MH-14
X, Ku Band Power GaAs FET FEATURES
•.. High Output Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE.
FLK207XV - GaAs FET & HEMT Chips
(Eudyna Devices)
FLK207XV
GaAs FET & HEMT Chips FEATURES
•.. High Output Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE: ηadd .
FL-10Z - EMC Filters
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