FLK027XV Datasheet, Chips, Eudyna Devices

✔ FLK027XV Features

High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Source Gate Drain DESCRIPTION The FLK027XP,

✔ FLK027XV Application

in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Qual

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FLK027XV

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Eudyna Devices

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📄 Datasheet

Description:

Gaas fet & hemt chips. The FLK027XP, and FLK027XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range

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📁 Related Datasheet

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FLK057XV - GaAs FET & HEMT Chips (Eudyna Devices)
FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Prove.

FLK107MH-14 - X / Ku Band Power GaAs FET (Eudyna Devices)
FEATURES • High Output Power: P1dB = 30.0dBm(Typ.) • High Gain: G1dB = 6.5dB(Typ.) • High PAE: ηadd = 31%(Typ.) • Proven Reliability • Hermetic Metal/.

FLK207MH-14 - Ku Band Power GaAs FET (Eudyna Devices)
FLK207MH-14 X, Ku Band Power GaAs FET FEATURES •.. High Output Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE.

FLK207XV - GaAs FET & HEMT Chips (Eudyna Devices)
FLK207XV GaAs FET & HEMT Chips FEATURES •.. High Output Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE: ηadd .

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FLK027XV GaAs FET HEMT Chips Eudyna Devices