FLM5964-35F Datasheet, Fet, Eudyna Devices

FLM5964-35F Features

• Fet High Output Power: P1dB=45.5dBm(Typ.) High Gain: G1dB=9.0dB(Typ.) High PAE: ηadd=36%(Typ.) Broad Band: 5.9~6.4GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTIO

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Part number:

FLM5964-35F

Manufacturer:

Eudyna Devices

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314.39kb

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📄 Datasheet

Description:

C-band internally matched fet. The FLM5964-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in

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FLM5964-35F

Eudyna Devices

📁 Related Datasheet

FLM5964-35DA - Internally Matched Power GaAs FETs (Fujitsu)
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

FLM5964-35F - C-Band Internally Matched FET (SUMITOMO)
FLM5964-35F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=45.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=36%(Typ.) • .

FLM5964-12DA - Internally Matched Power GaAs FETs (Fujitsu)
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

FLM5964-12F - C-Band Internally Matched FET (Fujitsu)
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

FLM5964-12F - C-Band Internally Matched FET (Eudyna Devices)
w m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 41.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd =.

FLM5964-12F - C-Band Internally Matched FET (SUMITOMO)
FLM5964-12F FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46d.

FLM5964-12F-001 - C-Band Internally Matched FET (SUMITOMO)
FLM5964-12F/001 C-Band Internally Matched FET FEATURES • High Output Power: P1dB=41.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=37%(Typ..

FLM5964-18DA - Internally Matched Power GaAs FETs (Fujitsu)
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

FLM5964-18F - C-Band Internally Matched FET (Fujitsu)
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

FLM5964-18F - C-Band Internally Matched FET (Eudyna Devices)
w m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 43.0dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd =.