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FLM5964-4F C-Band Internally Matched FET

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Description

wEudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.Item Drain-Source Voltage Gate-Source Voltag.
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Datasheet Specifications

Part number
FLM5964-4F
Manufacturer
Eudyna Devices
File Size
281.53 KB
Datasheet
FLM5964-4F_EudynaDevices.pdf
Description
C-Band Internally Matched FET

Features

* . c
* High Output Power: P1dB = 36.5dBm (Typ. ) U
* High Gain: G1dB =10.0dB (Typ. ) 4 t
* High PAE: ηadd = 37% (Typ. ) e = 25.5dBm
* Low IM3 = -46dBc@Po e
* Broad Band: 5.9h ~ 6.4GHz S
* Impedance Matched Zin/Zout = 50Ω aSealed Package t
* Hermetic

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