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FLM5964-4F

C-Band Internally Matched FET

FLM5964-4F Features

* .c

* High Output Power: P1dB = 36.5dBm (Typ.) U

* High Gain: G1dB =10.0dB (Typ.) 4 t

* High PAE: ηadd = 37% (Typ.) e = 25.5dBm

* Low IM3 = -46dBc@Po e

* Broad Band: 5.9h ~ 6.4GHz S

* Impedance Matched Zin/Zout = 50Ω aSealed Package t

* Hermetic

FLM5964-4F General Description

D . The FLM5964-4F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system. FLM5964-4F ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Tc = 25°C Fujitsu recommends the following conditions for the reliable ope.

FLM5964-4F Datasheet (281.53 KB)

Preview of FLM5964-4F PDF

Datasheet Details

Part number:

FLM5964-4F

Manufacturer:

Eudyna Devices

File Size:

281.53 KB

Description:

C-band internally matched fet.
wEudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. Item Drain-Source Voltage Gate-Source Voltag.

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TAGS

FLM5964-4F C-Band Internally Matched FET Eudyna Devices

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