Datasheet4U Logo Datasheet4U.com

FLM5964-8F

C-Band Internally Matched FET

FLM5964-8F Features

* .c

* High Output Power: P1dB = 39.5dBm (Typ.) U

* High Gain: G1dB = 10.0dB (Typ.) 4 t

* High PAE: ηadd = 37% (Typ.) e = 28.5dBm

* Low IM3 = -46dBc@Po e

* Broad Band: 5.9h ~ 6.4GHz S

* Impedance Matched Zin/Zout = 50Ω aSealed Package t

* Hermeti

FLM5964-8F General Description

D . The FLM5964-8F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system. Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condit.

FLM5964-8F Datasheet (280.82 KB)

Preview of FLM5964-8F PDF

Datasheet Details

Part number:

FLM5964-8F

Manufacturer:

Eudyna Devices

File Size:

280.82 KB

Description:

C-band internally matched fet.

📁 Related Datasheet

FLM5964-8F C-Band Internally Matched FET (Fujitsu)

FLM5964-8F C-Band Internally Matched FET (SUMITOMO)

FLM5964-8F-001 C-Band Internally Matched FET (SUMITOMO)

FLM5964-12DA Internally Matched Power GaAs FETs (Fujitsu)

FLM5964-12F C-Band Internally Matched FET (Fujitsu)

FLM5964-12F C-Band Internally Matched FET (Eudyna Devices)

FLM5964-12F C-Band Internally Matched FET (SUMITOMO)

FLM5964-12F-001 C-Band Internally Matched FET (SUMITOMO)

FLM5964-18DA Internally Matched Power GaAs FETs (Fujitsu)

FLM5964-18F C-Band Internally Matched FET (Fujitsu)

TAGS

FLM5964-8F C-Band Internally Matched FET Eudyna Devices

Image Gallery

FLM5964-8F Datasheet Preview Page 2 FLM5964-8F Datasheet Preview Page 3

FLM5964-8F Distributor