FLM5964-8F Datasheet, Fet, Eudyna Devices

FLM5964-8F Features

• Fet .c
• High Output Power: P1dB = 39.5dBm (Typ.) U
• High Gain: G1dB = 10.0dB (Typ.) 4 t
• High PAE: ηadd = 37% (Typ.) e = 28.5dBm
• Low IM3 = -46dBc@Po e <

PDF File Details

Part number:

FLM5964-8F

Manufacturer:

Eudyna Devices

File Size:

280.82kb

Download:

📄 Datasheet

Description:

C-band internally matched fet. D . The FLM5964-8F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gai

TAGS

FLM5964-8F

Eudyna Devices

📁 Related Datasheet

FLM5964-8F - C-Band Internally Matched FET (Fujitsu)
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

FLM5964-8F - C-Band Internally Matched FET (SUMITOMO)
FLM5964-8F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: hadd = 37% .

FLM5964-8F-001 - C-Band Internally Matched FET (SUMITOMO)
FLM5964-8F/001 C-Band Internally Matched FET FEATURES • High Output Power: P1dB=39.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=35%(Typ.).

FLM5964-12DA - Internally Matched Power GaAs FETs (Fujitsu)
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

FLM5964-12F - C-Band Internally Matched FET (Fujitsu)
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

FLM5964-12F - C-Band Internally Matched FET (Eudyna Devices)
w m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 41.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd =.

FLM5964-12F - C-Band Internally Matched FET (SUMITOMO)
FLM5964-12F FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46d.

FLM5964-12F-001 - C-Band Internally Matched FET (SUMITOMO)
FLM5964-12F/001 C-Band Internally Matched FET FEATURES • High Output Power: P1dB=41.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=37%(Typ..

FLM5964-18DA - Internally Matched Power GaAs FETs (Fujitsu)
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .

FLM5964-18F - C-Band Internally Matched FET (Fujitsu)
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .