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FLM5964-8F-001

C-Band Internally Matched FET

FLM5964-8F-001 Features

* High Output Power: P1dB=39.5dBm(Typ.)

* High Gain: G1dB=9.0dB(Typ.)

* High PAE: hadd=35%(Typ.)

* Broad Band: 5.85 to 6.75GHz

* Impedance Matched Zin/Zout = 50ohm

* Hermetically Sealed Package DESCRIPTION The FLM5964-8F/001 is a power GaAs FET that is

FLM5964-8F-001 General Description

The FLM5964-8F/001 is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS Item Drain-Source Voltage (Tc=25deg.C) Gate-Source Voltage (Tc=25deg.C) Total Pow er Dissipation Storage Tem perature Chan.

FLM5964-8F-001 Datasheet (210.68 KB)

Preview of FLM5964-8F-001 PDF

Datasheet Details

Part number:

FLM5964-8F-001

Manufacturer:

SUMITOMO

File Size:

210.68 KB

Description:

C-band internally matched fet.

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TAGS

FLM5964-8F-001 C-Band Internally Matched FET SUMITOMO

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