FLM5964-4F-001
SUMITOMO
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Internally matched high power gaas fets.
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FLM5964-4F - C-Band Internally Matched FET
(Fujitsu)
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FLM5964-4F - C-Band Internally Matched FET
(Eudyna Devices)
wEudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Item Drain-Source Voltage Gate-Source Voltag.
FLM5964-4F - C-Band Internally Matched FET
(SUMITOMO)
FLM5964-4F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB =10.0dB (Typ.) • High PAE: hadd = 37% (.
FLM5964-45F - C-Band Internally Matched FET
(Eudyna Devices)
FEATURES ・High Output Power: P1dB=47.0dBm(Typ.) ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=39%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/.
FLM5964-45F - C-Band Internally Matched FET
(SUMITOMO)
FLM5964-45F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB=47.0dBm(Typ.) • High Gain: G1dB=8.5dB(Typ.) • High PAE: hadd=39%(Typ.) • .
FLM5964-12DA - Internally Matched Power GaAs FETs
(Fujitsu)
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FLM5964-12F - C-Band Internally Matched FET
(Fujitsu)
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FLM5964-12F - C-Band Internally Matched FET
(Eudyna Devices)
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m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 41.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd =.
FLM5964-12F - C-Band Internally Matched FET
(SUMITOMO)
FLM5964-12F
FEATURES
• • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46d.
FLM5964-12F-001 - C-Band Internally Matched FET
(SUMITOMO)
FLM5964-12F/001
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB=41.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=37%(Typ..
