FLM5972-12F
SUMITOMO
401.75kb
C-band internally matched fet. The FLM5972-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in
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FLM5972-4F - C-Band Internally Matched FET
(SUMITOMO)
FLM5972-4F
FEATURES
• • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -45dBc.
FLM5972-8F - C-Band Internally Matched FET
(SUMITOMO)
FLM5972-8F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB = 39.0dBm (Typ.) • High Gain: G1dB = 8.5dB (Typ.) • High PAE: hadd = 31% (.
FLM5964-12DA - Internally Matched Power GaAs FETs
(Fujitsu)
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FLM5964-12F - C-Band Internally Matched FET
(Fujitsu)
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FLM5964-12F - C-Band Internally Matched FET
(Eudyna Devices)
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m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 41.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd =.
FLM5964-12F - C-Band Internally Matched FET
(SUMITOMO)
FLM5964-12F
FEATURES
• • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46d.
FLM5964-12F-001 - C-Band Internally Matched FET
(SUMITOMO)
FLM5964-12F/001
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB=41.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=37%(Typ..
FLM5964-18DA - Internally Matched Power GaAs FETs
(Fujitsu)
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FLM5964-18F - C-Band Internally Matched FET
(Fujitsu)
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FLM5964-18F - C-Band Internally Matched FET
(Eudyna Devices)
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m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 43.0dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd =.
